preliminary us4pbc, us4pcc & us4pdc vishay general semiconductor document number: 88990 revision: 22-nov-07 www.vishay.com 1 high current density surface mount ultrafast rectifiers features ? very low profile - typical height of 1.1 mm ? ideal for automated placement ? oxide planar chip junction ? ultrafast recovery times for high frequency ? low forward voltage drop, low power loss ? meets msl level 1 per j-std-020, lf maximum peak of 260 c ? component in accordance to rohs 2002/95/ec and weee 2002/96/ec typical applications for use in high frequency rectification and freewheeling application in switching mode converters and inverters for consumer computer, automotive and telecommunicatio n applications. mechanical data case: to-277a (smpc) epoxy meets ul 94v-0 flammability rating terminals: matte tin plated leads, solderable per j-std-002 and jesd22-b102 e3 suffix for commercial grade, meets jesd 201 class 1a whisker test, he3 suffix for high reliability grade (aec q101 qualified), meets jesd 201 class 2 whisker test primary characteristics i f(av) 2.0 a x 2 v rrm 100 v, 150 v, 200 v i fsm 30 a t rr 25 ns v f at i f = 2.0 a 0.77 v t j max. 150 c to-277a (smpc) k 2 1 anode 1 anode 2 cathode k esmp tm series maximum ratings (t a = 25 c unless otherwise noted) parameter symbol us4pbc us4pcc us4pdc unit device marking code u4bc u4cc u4dc maximum repetitive peak reverse voltage v rrm 100 150 200 v maximum average forward rectified current (fig. 1) total device per diode i f(av) 4.0 2.0 a peak forward surge current 10 ms single half sine-wave superimposed on rated load per diode i fsm 30 a operating junction and storage temperature range t j, t stg - 55 to + 150 c
preliminary us4pbc, us4pcc & us4pdc vishay general semiconductor www.vishay.com document number: 88990 revision: 22-nov-07 2 note: (1) pulse test: 300 s pulse width, 1 % duty cycle note: (1) units mounted on recommended p.c.b. 1 oz. pad layout note: (1) automotive grade aec q101 qualified ratings and characteristics curves (t a = 25 c unless otherwise noted) electrical characteristics (t a = 25 c unless otherwise noted) parameter test conditions symbol typ. max. unit maximum instantaneous forward voltage per diode (1) i f = 1.0 a i f = 2.0 a t a = 25 c v f 0.89 0.92 - 0.98 v i f = 1.0 a i f = 2.0 a t a = 125 c 0.73 0.77 - 0.85 maximum reverse current per diode (1) rated v r t a = 25 c t a = 125 c i r - 0.5 5.0 1.0 a ma maximum reverse recovery time per diode i f = 0.5 a, i r = 1.0 a, i rr = 0.25 a t rr 20 25 ns typical junction capacitance per diode 4.0 v, 1 mhz c j 20 - pf thermal characteristics (t a = 25 c unless otherwise noted) parameter symbol us4pbc us4pcc us4pdc unit typical thermal resistance per diode r ja (1) r jl 60 4 c/w ordering information (example) preferred p/n unit weight (g) preferred package code base quantity delivery mode us4pdc-e3/86a 0.10 86a 1500 7" diameter plastic tape and reel us4pdc-e3/87a 0.10 87a 6500 13" diameter plastic tape and reel us4pdche3/86a (1) 0.10 86a 1500 7" diameter plastic tape and reel us4pdche3/87a (1) 0.10 87a 6500 13" diameter plastic tape and reel figure 1. maximum forward current derating curve 6 5 4 3 2 1 0 0 25 50 75 100 125 150 175 a v erage for w ard re ctified c u rrent (a) case temperat u re (c) figure 2. forward power loss characteristics per diode 0 0.5 1.0 1.5 2.0 2.5 0 0.5 1.0 1.5 2.0 2.5 a v erage for w ard c u rrent (a) a v erage po w er loss ( w ) d = 0.1 d = 0.2 d = 0.3 d = 0.5 d = 0. 8 d = 1.0 d = t p /t t p t
preliminary us4pbc, us4pcc & us4pdc vishay general semiconductor document number: 88990 revision: 22-nov-07 www.vishay.com 3 figure 3. typical instantaneous forw ard characteristics per diode figure 4. typical reverse leak age characteristics per diode 0.01 0.1 1 10 100 0.2 0.4 0.6 0. 8 1.0 1.2 1.4 1.6 1. 8 t a = 150 c t a = 125 c t a = 25 c instantaneo u s for w ard v oltage ( v ) instantaneo u s for w ard c u rrent (a) 0 1 10 100 1000 10000 10 20 30 40 50 60 70 8 0 90 100 t a = 150 c t a = 125 c t a = 25 c percent of rated peak re v erse v oltage ( % ) instantaneo u s re v erse c u rrent ( a) figure 5. typical juncti on capacitance per diode figure 6. typical transient thermal impedance per diode 1 10 100 0.1 1 10 100 t j = 25 c f = 1.0 mhz v sig = 50 m v p-p re v erse v oltage ( v ) j u nction capacitance (pf) j u nction to am b ient 0.01 0.1 1 10 100 1 10 100 t - p u lse d u ration (s) transient thermal impedance (c/ w )
preliminary us4pbc, us4pcc & us4pdc vishay general semiconductor www.vishay.com document number: 88990 revision: 22-nov-07 4 package outline dimensions in inches (millimeters) conform to jedec to-277a 0.016 (0.40) 0.006 (0.15) 0.047 (1.20) 0.039 (1.00) 0.1 8 7 (4.75) 0.175 (4.45) 0.262 (6.65) 0.250 (6.35) 0.242 (6.15) 0.23 8 (6.05) 0.171 (4.35) 0.167 (4.25) k 21 0.026 (0.65) n om. to-277a (smpc) 0.146 (3.70) 0.134 (3.40) 0.0 8 7 (2.20) 0.075 (1.90) 0.1 8 9 (4. 8 0) 0.173 (4.40) 0.049 (1.24) 0.037 (0.94) 0.053 (1.35) 0.041 (1.05) 0.030 (0.75) n om. 0.0 8 4 (2.13) n om. 0.155 (3.94) n om. mountin g pad layout 0.26 8 (6. 8 0) 0.1 8 6 (4.72) mi n . 0.050 (1.27) mi n . 0.041 (1.04) 0.055 (1.40) mi n . 0.1 8 9 (4. 8 0) mi n .
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